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Understanding the Nanoindentation Edge Effect of Single-Crystal Silicon Using Molecular Dynamics Simulations
Chao Long1, Ruihan Li2, Pengyue Zhao1
1Center of Ultra-Precision Optoelectronic Instrumentation Engineering, Harbin Institute of Technology, Harbin 150001, China.
Micromachines
|July 30, 2025
Summary
This study reveals how indentation position affects edge effects in single-crystal silicon. Closer indentations to the edge cause more particle extrusion and wider surface collapse, impacting stress and phase transitions.
Area of Science:
- Materials Science
- Nanotechnology
- Solid Mechanics
Background:
- Edge effects are critical in material contact but poorly understood at the microscale.
- Understanding these effects is vital for practical applications involving material edges.
Purpose of the Study:
- To investigate the atomic-scale mechanisms of edge effects in single-crystal silicon.
- To analyze how indentation position and depth influence material behavior near edges.
Main Methods:
- Utilized molecular dynamics simulations to model indentation on single-crystal silicon.
- Varied indentation positions relative to the material edge and simulated contact.
Main Results:
- Indentation position significantly influences edge effects, with closer proximity to the edge causing increased particle extrusion.
- The collapse range of the indentation surface widens as indentation approaches the edge.
- Indentation position affects von Mises stress distribution and phase transition areas, concentrating them near the edge.
Conclusions:
- The study elucidates the atomic-scale deformation mechanisms governing edge effects in single-crystal silicon.
- Findings highlight the critical role of indentation position in material response at material boundaries.
