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A 1000 fps High-Dynamic-Range Global Shutter CMOS Image Sensor with Full Thermometer Code Current-Steering Ramp.

Liqiang Han1, Ganlin Cheng1, Xu Zhang1

  • 1Beijing Institute of Space Mechanics and Electricity, Beijing 100094, China.

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Summary
This summary is machine-generated.

This study introduces a high-dynamic-range global shutter CMOS image sensor capable of 1000 frames per second. It details pixel architecture, noise analysis, and ramp generator design for advanced imaging applications.

Keywords:
CMOS image sensorcurrent-steering DACglobal shutter pixelreadout noise

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Area of Science:

  • Electrical Engineering
  • Image Sensor Technology
  • Semiconductor Devices

Background:

  • Global shutter CMOS image sensors are crucial for capturing fast-moving objects without motion artifacts.
  • Achieving high dynamic range (HDR) and high frame rates simultaneously presents significant design challenges.

Purpose of the Study:

  • To present a novel 1024 × 512, 1000 fps, high-dynamic-range global shutter CMOS image sensor.
  • To analyze the pixel noise, non-linearity, and image lag characteristics.
  • To discuss the design of the ramp generator and comparator for optimal performance.

Main Methods:

  • Utilized a voltage domain global shutter architecture with a 24 μm × 24 μm pixel pitch.
  • Integrated high-gain and low-gain signal capture within a single frame.
  • Employed a 12-bit full thermometer code current-steering DAC for the ramp generator.

Main Results:

  • Achieved a combined dynamic range of 95 dB and a full well capacity of 620 ke-.
  • Analyzed pixel noise, non-linearity, and image lag due to parasitic capacitance.
  • Evaluated the ramp generator's non-linear response and column readout noise.

Conclusions:

  • The developed CMOS image sensor demonstrates excellent performance in terms of frame rate and dynamic range.
  • The analysis provides insights into mitigating non-idealities like noise and image lag.
  • The design considerations for the ramp generator and comparator are essential for future high-performance sensor development.