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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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MOCVD-grown InAs/InP quantum dot lasers with low threshold current.

Zhao Yan, Shangfeng Liu, Bogdan-Petrin Ratiu

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    We developed high-performance InAs/InP quantum dot lasers for C- and L-bands using metal-organic chemical vapor deposition (MOCVD). These lasers exhibit low threshold currents and stable operation up to 120°C.

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    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Quantum dot lasers are crucial for optical communication.
    • Achieving high performance in InAs/InP quantum dots remains challenging.

    Purpose of the Study:

    • To develop low-threshold, high-yield InAs/InP quantum dot lasers.
    • To optimize MOCVD growth for improved quantum dot quality and laser performance.

    Main Methods:

    • Metal-organic chemical vapor deposition (MOCVD) for InAs/InP quantum dot growth.
    • Optimization of epitaxial conditions, including GaAs interfacial layers.
    • Fabrication of deep-etched ridge waveguide lasers with specific dimensions.
    • Characterization under pulsed injection and temperature-dependent measurements.

    Main Results:

    • Achieved in-plane symmetric quantum dots with enhanced optical quality.
    • Demonstrated low threshold currents of 17 mA (300 μm) and 28 mA (1000 μm).
    • Lasing sustained up to 120°C with a characteristic temperature (T0) of 74.9 K below 90°C.

    Conclusions:

    • Optimized MOCVD growth yields high-quality InAs/InP quantum dots for lasers.
    • Fabricated lasers demonstrate excellent performance metrics, including low thresholds and high-temperature stability.
    • These devices are promising for C- and L-band optical communication applications.