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Vertical GaN-On-GaN Micro-LEDs for Near-Eye Displays.

Zichun Li1, Yibo Liu1, Haonan Jiang1

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Gallium nitride-on-gallium nitride (GaN-on-GaN) micro-light-emitting diodes (micro-LEDs) fabricated using ion implantation offer superior performance for augmented reality (AR) and virtual reality (VR) displays. This advanced technique improves efficiency and enables ultra-dense integration for next-generation devices.

Keywords:
GaN‐on‐GaNion implantationmicro‐LEDsvertical structure

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Devices

Background:

  • Near-eye applications like augmented reality (AR) and virtual reality (VR) demand micro-light-emitting diodes (micro-LEDs) with higher brightness, resolution, and smaller form factors.
  • Gallium nitride-on-gallium nitride (GaN-on-GaN) homoepitaxial micro-LEDs offer advantages such as low defect density, superior thermal management, and high efficiency compared to conventional heterogeneous substrates.
  • The conductivity of GaN substrates facilitates the integration of vertical micro-LEDs, crucial for enhancing performance in compact display systems.

Purpose of the Study:

  • To develop advanced GaN-on-GaN homoepitaxial micro-LEDs for high-performance near-eye displays.
  • To address the limitations of traditional micro-LED fabrication methods, particularly inductive coupled plasma (ICP) mesa etching.
  • To improve the electrical and optical characteristics of micro-LEDs for applications requiring high brightness and resolution.

Main Methods:

  • Fabrication of low-defect-density GaN-on-GaN micro-LEDs utilizing homoepitaxial platforms.
  • Replacement of conventional ICP mesa etching with fluorine ion implantation for pixel isolation.
  • Implementation of vertical micro-LED architectures to achieve a compact device footprint.

Main Results:

  • Ion implantation for pixel isolation significantly reduced series resistance compared to ICP etching.
  • Optical performance was enhanced, evidenced by sharper pixel edges and a narrower full width at half maximum (FWHM).
  • Vertical micro-LED structures demonstrated a substantial improvement in effective external quantum efficiency (EQEeffective) over traditional devices, indicating suitability for high-brightness applications.

Conclusions:

  • The developed GaN-on-GaN micro-LEDs with ion-implanted vertical structures represent a significant advancement for high-resolution, energy-efficient displays.
  • This fabrication approach offers a scalable pathway for next-generation AR/VR near-eye systems.
  • The study highlights the potential of homoepitaxial GaN platforms and innovative isolation techniques to overcome current micro-LED limitations.