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Related Experiment Video

Updated: Sep 13, 2025

High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal
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Anomalous Phase Change in SbSex Memristors for Ultrafast Image Encryption.

Guangdong Zhou1, Dengshun Gu1, Jin Ye1

  • 1College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China.

Advanced Materials (Deerfield Beach, Fla.)
|July 31, 2025
PubMed
Summary

Researchers discovered an anomalous phase transition in SbSe$_{x}$ thin films, creating a unique N-shape negative differential resistance (NDR) effect. This breakthrough enables ultra-fast image encryption using defective memristors.

Keywords:
Joule heatimage encryptionmemristornegative differential resistancephase change

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Device Physics

Background:

  • Complex electrical nonlinearity in neurons is crucial for high-level cognition.
  • Developing electronic devices with similar rich dynamics is a significant technological goal.

Purpose of the Study:

  • To investigate the anomalous phase transition in semiconducting SbSe$_{x}$ thin films.
  • To explore the potential of observed nonlinear electrical dynamics for advanced applications.

Main Methods:

  • In situ observation of phase transition in SbSe$_{x}$ thin films.
  • Theoretical simulations incorporating Sb or Se vacancies.
  • Analysis of localized Joule heating effects.

Main Results:

  • Observed an anomalous phase transition involving amorphous-to-crystalline transformation and unprecedented Sb metallic nucleus growth.
  • Identified that localized Joule heating near vacancies induces anomalous phase transitions.
  • Demonstrated a unique N-shape negative differential resistance (NDR) effect in defective memristors.

Conclusions:

  • The study reveals a novel phase transition mechanism in SbSe$_{x}$ driven by vacancies and localized heating.
  • The observed N-shape NDR effect provides a chaotic system for ultra-fast image encryption.
  • This research opens new avenues for phase change electronics and neuromorphic computing.