Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of FET01:22

Biasing of FET

370
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
370
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

740
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
740
Field Effect Transistor01:29

Field Effect Transistor

570
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
570
Characteristics of JFET01:21

Characteristics of JFET

663
Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
663
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

483
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
483
Characteristics of MOSFET01:17

Characteristics of MOSFET

503
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
503

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Activation of KIT signaling promotes early tumorigenesis through the AP-1 pathway in APC/TP53 double-knockout human colon organoids.

Cell death & disease·2026
Same author

DeepRespNet: a hybrid attention-recurrent framework for non-contact respiratory rate estimation.

Frontiers in physiology·2026
Same author

Ensuring HbA1c Accuracy and Variant Detection in Hemoglobin G-Coushatta and Queens Using Variant Mode Analysis.

Diagnostics (Basel, Switzerland)·2026
Same author

Effects of ramped GVS parameter combinations on vestibular perception and their application in a Virtual Reality flight simulator.

Ergonomics·2026
Same author

High-strength and high-modulus silicon monoxide for high-energy-density and fast-charging lithium-ion batteries.

Nature communications·2026
Same author

Enhanced multicancer screening assay through whole-genome methylation sequencing-based multimodal cell-free DNA analysis.

Experimental & molecular medicine·2026
Same journal

Peripheral B-cell receptor repertoire predicts immune-related adverse events following immune checkpoint inhibitor therapy in advanced renal cell carcinoma.

Scientific reports·2026
Same journal

Effects of black soldier fly (Hermetia illucens L.) larvae zoocompost on the mineral element content of blue honeysuckle berries.

Scientific reports·2026
Same journal

Investigation on absorption refrigeration performance of R1243zf with imidazolium ionic liquid as the working pairs.

Scientific reports·2026
Same journal

DeepTriage-CN: integrating clinical text with vital signs for emergency department admission prediction in an aging population.

Scientific reports·2026
Same journal

Gold nanoparticles as dual-action antiviral agents: disruption of SARS-CoV-2 viral envelopes and RNA integrity.

Scientific reports·2026
Same journal

Comparison of capillary microsampling and venous blood for multi-pathogen serosurveillance.

Scientific reports·2026
See all related articles

Related Experiment Video

Updated: Sep 13, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.1K

Advanced polynomial Y-function method for precise mobility characterization in 2D FETs.

Jeongyun Jang1, Yeon Jae Lee1, Hayoung Roh1

  • 1Division of Electronic & Semiconductor Engineering, Ewha Womans University, Seoul, 03670, Republic of Korea.

Scientific Reports
|July 31, 2025
PubMed
Summary
This summary is machine-generated.

Accurate mobility extraction in 2D transition metal dichalcogenide field-effect transistors (FETs) is vital. A new polynomial Y-function method precisely characterizes MoS2 FETs, overcoming limitations of older techniques for better device optimization.

More Related Videos

Fabrication and Implementation of a Reference-Free Traction Force Microscopy Platform
08:10

Fabrication and Implementation of a Reference-Free Traction Force Microscopy Platform

Published on: October 6, 2019

6.6K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K

Related Experiment Videos

Last Updated: Sep 13, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.1K
Fabrication and Implementation of a Reference-Free Traction Force Microscopy Platform
08:10

Fabrication and Implementation of a Reference-Free Traction Force Microscopy Platform

Published on: October 6, 2019

6.6K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Accurate mobility parameter extraction in 2D transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) is essential for performance evaluation and device design.
  • Conventional methods like field-effect mobility are limited by series resistance and noise amplification, leading to inaccuracies.

Purpose of the Study:

  • To present an advanced polynomial Y-function methodology for precise mobility characterization of MoS2 FETs.
  • To systematically discriminate between scattering mechanisms and accurately extract threshold voltage.
  • To compare the accuracy and consistency of the proposed method with conventional approaches using back-gate (BG) and top-gate (TG) configurations.

Main Methods:

  • Development and application of a polynomial Y-function methodology for mobility extraction in MoS2 FETs.
  • Comparative analysis of back-gate (BG) and top-gate (TG) MoS2 FET configurations.
  • Isolation and identification of carrier scattering mechanisms and their impact on mobility.

Main Results:

  • The polynomial Y-function method demonstrates superior accuracy and consistency compared to conventional techniques.
  • Top-gate (TG) FETs show stronger surface-roughness scattering due to intensified electric fields, causing mobility degradation.
  • The method successfully isolates key degradation factors influencing carrier transport.

Conclusions:

  • The polynomial Y-function method provides a robust framework for accurate mobility characterization in 2D FETs.
  • Understanding scattering mechanisms is crucial for optimizing 2D material-based electronic devices.
  • This approach facilitates the integration of 2D FETs into next-generation nanoelectronic applications.