Related Experiment Video
Updated: Sep 13, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Screening of Material Defects using Universal Machine-Learning Interatomic Potentials
Ethan Berger1,2, Mohammad Bagheri3, Hannu-Pekka Komsa1
1Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, Oulu, FIN-90014, Finland.
Abstract:
Finding new materials with previously unknown atomic structure or materials with optimal set of properties for a specific application greatly benefits from computational modeling. Recently, such screening has been dramatically accelerated by the invent of universal machine-learning interatomic potentials that offer first principles accuracy at orders of magnitude lower computational cost. Their application to the screening of defects with desired properties or to finding new stable compounds with high density of defects, however, has not been explored. Here, it is shown that the universal machine-learning interatomic potentials have reached sufficient accuracy to enable large-scale screening of defective materials. Vacancy calculations are carried out for 86,259 materials in the Materials Project database and the formation energies analyzed in terms of oxidation numbers. The application of these models is further demonstrated for finding new materials at or below the convex hull of known materials and for simulated etching of low-dimensional materials.
More Related Videos
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
07:24Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Related Concept Videos
Atomic Force Microscopy
The AFM Probe
The probe is regarded as the heart of any AFM setup and comprises the...
Predicting Molecular Geometry