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IR Absorption Frequency: Hybridization01:21

IR Absorption Frequency: Hybridization

772
Hydrocarbons such as alkanes, alkenes, and alkynes show characteristic C–H stretching absorption bands. These IR stretching frequencies depend on the hybridization of the involved carbon atom and can be explained in terms of the s character of each hybridized atomic orbital.
Among the sp, sp2, and sp3 hybridized orbitals, sp orbitals have the maximum s character (50%). Consequently, the electrons are held more closely to the nucleus, resulting in stronger and shorter C–H bonds that...
772
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

798
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
798
Indicators02:39

Indicators

49.4K
Certain organic substances change color in dilute solution when the hydronium ion concentration reaches a particular value. For example, phenolphthalein is a colorless substance in any aqueous solution with a hydronium ion concentration greater than 5.0 × 10−9 M (pH < 8.3). In more basic solutions where the hydronium ion concentration is less than 5.0 × 10−9 M (pH > 8.3), it is red or pink. Substances such as phenolphthalein, which can be used to determine the pH of a solution, are...
49.4K
IR Absorption Frequency: Delocalization01:04

IR Absorption Frequency: Delocalization

920
Electron delocalization refers to the distribution of electrons across multiple atoms within a molecule rather than being confined to a single atom or bond. This phenomenon is common in systems with conjugated bonds—structures where alternating single and double bonds allow π-electrons to move freely across the network. The movement of electrons stabilizes the molecule and can affect various chemical properties, including vibrational frequencies observed in IR spectroscopy.
In IR...
920
Colors and Magnetism03:02

Colors and Magnetism

12.3K
Color in Coordination Complexes
When atoms or molecules absorb light at the proper frequency, their electrons are excited to higher-energy orbitals. For many main group atoms and molecules, the absorbed photons are in the ultraviolet range of the electromagnetic spectrum, which cannot be detected by the human eye. For coordination compounds, the energy difference between the d orbitals often allows photons in the visible range to be absorbed and emitted, which is seen as colors by the human...
12.3K
Resonance and Hybrid Structures02:16

Resonance and Hybrid Structures

18.3K
According to the theory of resonance, if two or more Lewis structures with the same arrangement of atoms can be written for a molecule, ion, or radical, the actual distribution of electrons is an average of that shown by the various Lewis structures.
Resonance Structures and Resonance Hybrids
The Lewis structure of a nitrite anion (NO2−) may actually be drawn in two different ways, distinguished by the locations of the N–O and N=O bonds.
18.3K

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Updated: Sep 13, 2025

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
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Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

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Carrier Dynamics and Structural Analyses of Orange/Red In-Rich InGaN Double-Quantum Wells LED Hybridized by Blue

Hadeel A Alamoudi1, Nuaman M Kutty1, Fatimah Alreshidi1

  • 1Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.

Small (Weinheim an Der Bergstrasse, Germany)
|August 4, 2025
PubMed
Summary

This study explores carrier dynamics in orange/red LEDs with In-rich InGaN/GaN double quantum wells (DQWs). A hybrid LED with an added In-poor InGaN single quantum well (SQW) shows enhanced efficiency and reduced non-radiative recombination.

Keywords:
III‐nitridesgreen gapperiodic V‐shaped elemental compositionstrain engineering‐related defectstrenches

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Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Optoelectronics

Background:

  • Long-wavelength (orange/red) light-emitting diodes (LEDs) based on InGaN/GaN quantum wells face challenges like efficiency droop and the quantum-confined Stark effect.
  • Understanding carrier dynamics in In-rich InGaN structures is crucial for developing efficient red/orange emitters.

Purpose of the Study:

  • To investigate the carrier dynamics in orange/red LEDs utilizing In-rich InGaN/GaN double quantum wells (DQWs).
  • To compare the performance of a hybrid LED structure, incorporating an In-poor InGaN single quantum well (SQW) alongside DQWs, against a control LED with DQWs only.
  • To elucidate the role of structural defects and strain on carrier behavior and emission properties.

Main Methods:

  • Fabrication and characterization of hybrid and control InGaN/GaN LED structures.
  • Advanced structural analysis including cathodoluminescence to study defect distribution and material composition.
  • Optical analysis using temperature-dependent photoluminescence (PL) and time-resolved PL to probe carrier dynamics.

Main Results:

  • The hybrid LED demonstrated significantly enhanced efficiency (27.9% internal quantum efficiency) compared to the control LED.
  • Unusual carrier dynamics were observed in the In-rich orange/red LED, including a sharp energy shift and peak width change between 160-200 K.
  • Cathodoluminescence revealed localized emission in the hybrid LED around V-pits/trenches, while the control LED showed DQW damage and blue emission below defects.
  • Reduced quantum-confined Stark effect was observed in the hybrid LED.

Conclusions:

  • The integration of an In-poor InGaN SQW in the hybrid LED structure effectively suppresses non-radiative recombination and acts as a carrier reservoir.
  • The hybrid structure mitigates DQW damage near threading dislocations, leading to improved performance for long-wavelength nitride emitters.
  • The findings provide a pathway for overcoming challenges in InGaN-based red/orange LED technology.