Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

798
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
798
Carrier Transport01:21

Carrier Transport

565
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
565
Predicting Molecular Geometry02:27

Predicting Molecular Geometry

36.0K
VSEPR Theory for Determination of Electron Pair Geometries
36.0K
P-N junction01:11

P-N junction

682
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
682
π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

1.1K
An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
1.1K
Biasing of P-N Junction01:16

Biasing of P-N Junction

868
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
868

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Minocycline-containing therapy in <i>Helicobacter pylori</i> infection: a systematic review and meta-analysis.

Therapeutic advances in gastroenterology·2026
Same author

Wafer-scale growth of highly stable p-type semiconducting monolayer MoSi<sub>2</sub>N<sub>4</sub> single crystals.

Nature materials·2026
Same author

Inflammasomes in digestive diseases: mechanisms and therapeutic potential.

Molecular biology reports·2026
Same author

Protocol for longitudinal two-photon calcium imaging and holographic optogenetic manipulation to investigate memory in mice.

STAR protocols·2026
Same author

Drastically magnetically tuned coupling strength and nonlinearity in CrSBr exciton-polaritons.

Light, science & applications·2026
Same author

Corrigendum to "Effects of abamectin sublethal doses on the invasive pest Tuta absoluta: Integration of population parameters and transcriptome analysis" [Pesticide Biochemistry and Physiology 218 (2026) 106924].

Pesticide biochemistry and physiology·2026

Related Experiment Video

Updated: Sep 12, 2025

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
10:18

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials

Published on: January 5, 2019

11.9K

Anisotropic High Carrier Mobility in Violet Phosphorus.

Yuanyuan Zheng1,2,3, Cong Wang1, Yubo Tian2,3

  • 1College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China.

Nano Letters
|August 4, 2025
PubMed
Summary

Violet phosphorus (VP) exhibits significant anisotropic transport properties, with higher carrier mobility along the a-axis than the b-axis. This finding clarifies the mechanism behind VP

Keywords:
anisotropic transportdeformation potentialmobilitytransient absorption microscopyviolet phosphorus

More Related Videos

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
10:40

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

Published on: June 28, 2016

7.6K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

Related Experiment Videos

Last Updated: Sep 12, 2025

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
10:18

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials

Published on: January 5, 2019

11.9K
High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
10:40

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

Published on: June 28, 2016

7.6K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Violet phosphorus (VP) possesses unique anisotropic structural and electronic properties.
  • High carrier mobility makes VP a promising material for advanced optoelectronic devices.
  • Experimental characterization of VP's anisotropic transport properties is crucial but lacking.

Purpose of the Study:

  • To experimentally investigate and reveal the anisotropic transport behavior of violet phosphorus nanosheets.
  • To determine the carrier mobility along different crystallographic axes of VP.
  • To elucidate the underlying mechanisms responsible for anisotropic transport in VP.

Main Methods:

  • Utilized polarized transient absorption microscopy to probe carrier dynamics.
  • Measured steady-state optical properties to understand transport mechanisms.
  • Analyzed the anisotropic diffusion and mobility of charge carriers.

Main Results:

  • Achieved high ambipolar mobility along the a-axis (∼2100 cm2V-1s-1) and lower mobility along the b-axis (∼380 cm2V-1s-1).
  • Observed a significant diffusion anisotropy ratio of 5.5:1.
  • Identified anisotropy in the deformation potential as a key factor governing transport behavior.

Conclusions:

  • Clarified the intrinsic mechanism of anisotropic carrier transport in violet phosphorus nanosheets.
  • Provided theoretical insights for the design of novel angle-sensitive optoelectronic devices.
  • Highlighted the potential of VP for next-generation electronic and photonic applications.