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Anomalous Hall Effect in Type IV 2D Collinear Magnets
Ling Bai1, Run-Wu Zhang1, Wanxiang Feng1
1Beijing Institute of Technology, Beijing Institute of Technology, Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, and School of Physics, Beijing, 100081, China and International Center for Quantum Materials, Zhuhai, 519000, China.
Researchers discovered a new type of two-dimensional (2D) collinear magnet. This phase exhibits unique properties like the anomalous Hall effect (AHE) without net magnetization, opening new spintronic possibilities.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Established magnetic phases include ferromagnets, antiferromagnets, and altermagnets.
- Two-dimensional (2D) materials offer unique platforms for exploring novel magnetic phenomena.
Purpose of the Study:
- To identify and characterize a previously unrecognized class of 2D collinear magnetic phase.
- To establish the symmetry criteria for this new magnetic phase.
- To explore its potential for unconventional spintronic applications.
Main Methods:
- Spin layer group analysis to derive symmetry criteria.
- First-principles calculations to screen candidate materials.
- Prototype studies using monolayer Hf2S to demonstrate key properties.
Main Results:
- Identification of a type IV 2D collinear magnetic phase with spin-degenerate bands in the nonrelativistic limit.
- Observation of time-reversal symmetry-breaking responses, including the anomalous Hall effect (AHE), despite zero net magnetization.
- Demonstration of AHE driven by spin-polarized and spin-neutral currents, with a symmetry-protected persistent spin texture in monolayer Hf2S.
Conclusions:
- The discovery expands the classification of magnetic phases in 2D materials.
- This new phase offers novel avenues for realizing unconventional spintronic functionalities.
- Type IV 2D collinear magnets represent a promising area for future research and device development.
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