GaGeTe/GaN Heterostructure-Based Photodetector with Wavelength-Regulated Dual-Function of Optical Imaging and Synapse

Area of Science:

• Materials Science
• Optoelectronics
• Nanotechnology

Background:

• Photodetectors are crucial for optical imaging and sensing.
• Developing devices with tunable functionalities and low dark current remains a challenge.

Purpose of the Study:

• To report a wavelength-regulated photodetector based on a GaGeTe/GaN heterostructure.
• To investigate its optoelectronic performance and emulate neural behaviors.

Main Methods:

• Fabrication of a GaGeTe/GaN heterostructure photodetector.
• Characterization of its optoelectronic properties under different wavelengths.
• Implementation in neural networks for classification tasks.

Main Results:

• Achieved low dark current (1 × 10^-13 A) and high specific detectivity (4.3 × 10¹³ Jones).
• Demonstrated wavelength-dependent modulation with millisecond switching speed at 355 nm.
• Emulated various biological neural behaviors at 400 nm and achieved 93.8% accuracy in numeral classification.

Conclusions:

• The GaGeTe/GaN photodetector offers remarkable optoelectronic performance and unique wavelength-tunable functionalities.
• The device successfully emulates neural synaptic plasticity, enabling neuromorphic computing applications.
• This work provides insights for developing multimode functional devices using 2D/3D heterostructures.