Inducing memristive behavior to MoSe₂/graphene bilayer using plasma treatment

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional (2D) materials possess unique electronic band structures, enabling novel electronic device applications.
• Defects in 2D material lattices can be engineered to impart desirable electronic properties, such as memory effects.
• Plasma treatment is an efficient and selective technique for modifying 2D materials.

Purpose of the Study:

• To present plasma treatment as a versatile method for inducing memory effects in 2D materials through structural modifications.
• To investigate the memristive properties induced in Molybdenum Diselenide (MoSe2) layers via oxygen plasma treatment.
• To explore the origin of memristive behavior by analyzing structural and chemical changes.

Main Methods:

• Oxygen plasma treatment was applied to Molybdenum Diselenide (MoSe2) layers.
• Raman spectroscopy was employed to identify and characterize induced oxygen defects.
• Scanning electron microscopy (SEM) was used to observe geometrical modifications and exfoliation of 2D flakes.

Main Results:

• Oxygen plasma treatment successfully induced defects and geometrical modifications in MoSe2 layers.
• The structural modifications resulted in observable memristive properties within the treated MoSe2.
• Raman spectroscopy confirmed the presence of oxygen-related defects post-plasma treatment.
• SEM images revealed exfoliation and altered flake geometry in the MoSe2.

Conclusions:

• Plasma treatment is a viable method for inducing memristive behavior in 2D materials like MoSe2.
• The combination of induced oxygen defects and geometrical evolution is responsible for the observed memristive properties.
• The promising endurance signatures of the resulting memristive behavior make this method attractive for device manufacturing.