Tellurium-Terminated MXene Synthesis via One-Step Tellurium Etching

With the rapid development of two-dimensional MXene materials, numerous preparation strategies have been proposed to enhance synthesis efficiency, mitigate environmental impact, and enable scalability for large-scale production. The compound etching approach, which relies on cationic oxidation of the A element of MAX phase precursors while anions typically adsorb onto MXene surfaces as functional groups, remains the main prevalent strategy. By contrast, synthesis methodologies utilizing elemental etching agents have been rarely reported. Here, we report a new elemental tellurium (Te)-based etching strategy for the preparation of MXene materials with tunable surface chemistry. By selectively removing the A-site element in MAX phases using Te, our approach avoids the use of toxic fluoride reagents and achieves tellurium-terminated surface groups that significantly enhance sodium storage performance. Experimental results show that Te-etched MXene delivers substantially higher capacities (exceeding 50% improvement over conventionally etched MXene) with superior rate capability, retaining high capacity at large current densities and demonstrating over 90% capacity retention after 1000 cycles. This innovative synthetic strategy provides new insight into controllable MXene preparation and performance optimization, while the as-obtained materials hold promises for high-performance sodium-ion batteries and other energy storage systems.