Modulating Energy and Hole Transfer in InP/ZnS-Rh640 Hybrid Assemblies for Color Conversion and Performance
Bo Li1, Fuwei Lv1, Yangdi Wang1
1State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, P. R. China.
None:
Directing the flow of energy and the transfer of holes that are produced in quantum dots (QDs)-dyes hybrid assemblies is crucial for color-conversion and high-performance light-emitting diodes (LEDs). Here, a tunable light color of LEDs from green to orange to warm white was achieved, which was attributed to the changes in Förster resonance energy transfer (FRET), hole transfer (HT) and cascade FRET processes. Using a combination of steady-state and transient-absorption experiments, the FRET and HT interactions in the InP/ZnS-Rh640 hybrid assemblies exhibit a competitive relationship. Furthermore, the enhancement of HT, suppression of FRET, and suppression of defect-state trapping processes in InP/ZnS-Rh640 hybrid assemblies effectively contribute to the significant improvement in brightness and external quantum efficiency of LEDs. The InP/ZnS-Rh640 hybrid assemblies-based LEDs with color-conversion and high-performance characteristics can be applied to optical imaging and encryption applications.
Related Concept Videos
01:11P-N junction
01:16Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...