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Updated: Sep 11, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric

Kyung Do Kim1, Seung Kyu Ryoo1, Min Kyu Yeom1

  • 1Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea.

Nature Communications
|August 11, 2025
PubMed

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