Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Transport01:21

Carrier Transport

562
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
562
Poisson's And Laplace's Equation01:25

Poisson's And Laplace's Equation

3.4K
The electric potential of the system can be calculated by relating it to the electric charge densities that give rise to the electric potential. The differential form of Gauss's law expresses the electric field's divergence in terms of the electric charge density.
3.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Edge-emitting LED refractometer.

Optics express·2026
Same author

Plasmonic electro-optic modulators integrated with a silicon rib waveguide.

Applied optics·2026
Same author

Surface Plasmon Enhanced Photoluminescence of Carbon Dots Formed In Situ on Silver Gratings.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Multiplexed biosensors based on interference of surface plasmons in multimode nanoslits.

Applied optics·2025
Same author

Selective modal excitation in a multimode nanoslit by interference of surface plasmon waves.

Nanoscale advances·2025
Same author

Electrically tunable plasmonic metasurface as a matrix of nanoantennas.

Nanophotonics (Berlin, Germany)·2024
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: Sep 11, 2025

Measurement of Scattering Nonlinearities from a Single Plasmonic Nanoparticle
15:06

Measurement of Scattering Nonlinearities from a Single Plasmonic Nanoparticle

Published on: January 3, 2016

12.9K

Plasmonic electro-optic modulators based on epsilon-near-zero materials: comparing the classical drift-diffusion and

Masoud Shabaninezhad, Hamid Mehrvar, Eric Bernier

    Optics Express
    |August 13, 2025
    PubMed
    Summary
    This summary is machine-generated.

    We developed advanced plasmonic electro-optic modulators using indium tin oxide (ITO). These devices achieve high speeds and low loss by precisely modeling carrier density in epsilon-near-zero (ENZ) materials for optoelectronics.

    More Related Videos

    Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
    07:39

    Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

    Published on: July 21, 2018

    6.9K
    Spectral and Angle-Resolved Magneto-Optical Characterization of Photonic Nanostructures
    08:01

    Spectral and Angle-Resolved Magneto-Optical Characterization of Photonic Nanostructures

    Published on: November 21, 2019

    7.2K

    Related Experiment Videos

    Last Updated: Sep 11, 2025

    Measurement of Scattering Nonlinearities from a Single Plasmonic Nanoparticle
    15:06

    Measurement of Scattering Nonlinearities from a Single Plasmonic Nanoparticle

    Published on: January 3, 2016

    12.9K
    Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
    07:39

    Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

    Published on: July 21, 2018

    6.9K
    Spectral and Angle-Resolved Magneto-Optical Characterization of Photonic Nanostructures
    08:01

    Spectral and Angle-Resolved Magneto-Optical Characterization of Photonic Nanostructures

    Published on: November 21, 2019

    7.2K

    Area of Science:

    • Optoelectronics
    • Materials Science
    • Nanotechnology

    Background:

    • Indium tin oxide (ITO) is a key material for optoelectronic devices.
    • Epsilon-near-zero (ENZ) materials exhibit unique optical properties.
    • Plasmonic devices offer nanoscale field confinement for enhanced performance.

    Purpose of the Study:

    • To design, model, and optimize high-performance plasmonic electro-optic modulators using ITO.
    • To investigate the impact of voltage-gated carrier density modulation in ENZ media.
    • To explore the trade-offs between speed, insertion loss, and extinction ratio in plasmonic modulators.

    Main Methods:

    • Utilizing classical drift-diffusion (CDD) and nonlinear Schrödinger-Poisson coupling (SPC) for carrier density modeling.
    • Leveraging the epsilon-near-zero (ENZ) effect in ITO for enhanced modulation.
    • Integrating plasmonic structures with silicon waveguides for operation at 1550 nm.

    Main Results:

    • Achieved a 3-dB bandwidth of 210 GHz.
    • Demonstrated an insertion loss of 3 dB and an extinction ratio of 5 dB.
    • Device length optimized to under 4 µm.

    Conclusions:

    • Precise carrier distribution modeling is crucial for ENZ materials in optoelectronics.
    • The developed modulators show potential for high-speed optical communication.
    • Balancing high-speed operation, low insertion loss, and extinction ratio is critical for device design.