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Plasmonic electro-optic modulators integrated with a silicon rib waveguide.

Masoud Shabaninezhad, Hamid Mehrvar, Eric Bernier

|March 17, 2026

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We developed novel plasmonic electro-optic modulators using silicon-on-insulator (SOI) technology. These devices achieve high performance with low voltage and low loss, enabling faster optical communications.

Area of Science:

Photonics
Optoelectronics
Materials Science

Background:

Integrated photonic devices are crucial for high-speed optical communication systems.
Existing electro-optic modulators face challenges in achieving high speed, low power consumption, and compact size.
Plasmonic devices offer potential for miniaturization and high-speed modulation.

Purpose of the Study:

To propose, model, and design a novel plasmonic electro-optic modulator integrated with silicon-on-insulator (SOI) rib waveguides.
To achieve low drive voltage and reduced on-state loss in plasmonic modulators.
To demonstrate high extinction ratio and electrical bandwidth in a compact device.

Main Methods:

Device design based on metal-insulator-semiconductor-metal (MISM) stacks acting as MOS capacitors.

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Lateral tapering of SOI rib waveguides to enhance and localize optical modes to MISM stacks.

Utilizing indium tin oxide (ITO) with varying doping levels for low voltage operation and reduced loss.

Exploiting epsilon-near-zero (ENZ) phenomenon in ITO for enhanced field confinement and carrier refraction effect.

Main Results:

An example design achieved an on-state insertion loss of 5.8 dB.
Demonstrated an extinction ratio of 5 dB.
Achieved an RC-limited electrical bandwidth of 214 GHz.
The device operates with a low drive voltage due to the MISM stack design and ITO properties.

Conclusions:

The proposed plasmonic electro-optic modulators integrated with SOI waveguides show promising performance for high-speed optical communication.
The MISM stack design with tailored ITO layers effectively reduces drive voltage and insertion loss.
The demonstrated bandwidth and extinction ratio highlight the potential of this technology for next-generation optical networks.