Dual polarization scattering reconfigurable integrated coded metasurface antenna based on a rotating adjustable

Optics Express
|August 13, 2025
PubMed
Summary

This study introduces a novel dual-polarization metasurface antenna with independently tunable scattering phases for both x and y polarizations. This reconfigurable antenna achieves dynamic control over scattering properties, enhancing performance for advanced applications.

Related Concept Videos

Mesh Analysis for AC Circuits01:12

Mesh Analysis for AC Circuits

In the domain of radio communication, the significance of impedance matching must be considered. It is crucial to ensure the efficient transmission of signals between radio transmitters and receivers. Achieving this balance involves using impedance-matching circuits, with one fundamental configuration comprising a resistor, capacitor, and inductor.
The process of harmonizing these impedances begins with a clear understanding of the input and output signals. Once these signals are known, the...
419
The Antenna Complex01:15

The Antenna Complex

Plants and other photosynthetic organisms comprise pigments capable of absorption of direct sunlight. These pigments are present in the reaction center - the main site of photochemical reactions as well as in the antenna complex. Under average light conditions, the rate at which reaction center pigments absorb light is far below the electron transport chain's capacity. As a result, the reaction center alone cannot provide enough energy to drive photosynthesis. The photosynthetic efficiency can...
6.2K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
332