Electrically pumped laser oscillation of C-band InAs quantum dot vertical-cavity surface-emitting lasers on InP(311)B...

We report, for the first time to the best of our knowledge, the demonstration of electrically pumped laser oscillation of C-band InAs quantum dot vertical-cavity surface-emitting lasers (QD VCSELs), fabricated on InP(311)B substrates by applying a strain compensation technique. Under room-temperature pulsed operation, these devices exhibit a threshold current of 13 mA, with an output power of 0.17 mW at 25 mA. Notably, the emitted light displays linear polarization oriented along the InP[-233] direction. These QD VCSELs exhibit remarkable potential as light sources for optical communication transceivers.