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Updated: Sep 11, 2025

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Van der Waals Integration of 1D Nb2Pd3Se8 and 2D WSe2 for Gate-Tunable In-Sensor Image Processing.

Vu Khac Dat1, Minh Chien Nguyen2, Byung Joo Jeong3

  • 1Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|August 13, 2025
PubMed
Summary

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Researchers developed novel 1D/2D heterojunction photodetectors using Nb2Pd3Se8 and WSe2. These self-powered devices exhibit gate-tunable, bi-directional photoresponse for advanced image processing applications.

Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • 1D and 2D materials integration shows promise for compact, power-efficient optoelectronic devices in machine vision.
  • The application of 1D materials in mixed-dimensional structures for convolutional image processing is underexplored.

Purpose of the Study:

  • To explore the potential of 1D materials in mixed-dimensional heterostructures for convolutional image processing.
  • To synthesize and integrate high-quality 1D-Nb2Pd3Se8 with 2D-WSe2 to create self-powered photodetectors with unique photoresponse characteristics.

Main Methods:

  • Synthesis of high-quality 1D-Nb2Pd3Se8 and its integration with 2D-WSe2 to form a type-I van der Waals heterojunction.
  • Fabrication of self-powered photodetectors utilizing the narrow band gap and work function of 1D-Nb2Pd3Se8.
Keywords:
1D vdW heterostructurebroadband photodetectionconvolution image processinggate‐tunable bi‐directional photoresponsevdW heterostructure‐based in‐sensor computing

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  • Utilizing gate-tunable electric fields to switch between n-p and n-n+ configurations, enabling control over photocurrent direction.

    • Main Results:

    • Demonstrated a gate-tunable, bi-directional photoresponse in the 1D/2D heterojunction photodetector.
    • Achieved both negative and positive photocurrent by reversing drift direction, with linear power dependence.
    • Device exhibited high responsivity (232 mA/W), external quantum efficiency (77% at 375 nm), rapid response time (~3 µs), high detectivity (6.35 × 10^10 Jones), and broadband detection (UV to NIR).
    • Enhanced sensitivity at 375 nm due to efficient conversion of high-energy photons.

    Conclusions:

    • The developed 1D/2D heterojunction photodetector offers a promising platform for in-sensor convolutional processing.
    • The gate-controllable, bi-directional photoresponse enables advanced image processing capabilities with high integration and portability.
    • This work opens new avenues for exploring mixed-dimensional van der Waals heterostructures in optoelectronic applications.