Fabrication of Low-Power Consumption Hydrogen Sensor Based on TiO_x/Pt Nanocontacts via Local Atom Migration

Hydrogen (H₂) gas sensors are essential for detecting leaks and ensuring safety, thereby supporting the broader adoption of hydrogen energy. The performance of H₂ sensors has been shown to be improved by the incorporation of TiO₂ nanostructures. The key findings are summarized as follows: (1) Resistive random-access memory (ReRAM) technology was used to fabricate extremely compact H₂ sensors via various forming techniques, and substantial sensor performance enhancement was investigated. (2) A nanocontact composed of titanium oxide (TiO_x)/platinum (Pt) was subjected to various forming operations to establish a Schottky junction with a nanogap structure on a tantalum oxide (Ta₂O₅) layer, and its properties were assessed. (3) When the Pt electrode was on the positive side during the forming operation used for ReRAM technology, a Pt nanopillar structure was produced. By contrast, when the forming operation was conducted with a positive bias on the TiO_x side, a mixed oxide film of Ta and Ti was produced, which indicates local Ta doping into the TiO_x. A sensor response of over 1000 times was achieved at a minimal voltage of 1 mV at room temperature. (4) This sensor fabrication technology based on the forming operation is promising for the development of low-power consumption sensors.