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Tuning the rate performance in O2-type layered manganese-based oxides through cobalt doping
Junda Li1, Xiaoxia Yang2,3, Guanjie Yan4
1Key Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education/Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China. ljliu2@163.com.
Abstract:
Lithium-rich manganese-based cathode materials Li[LixNiyMn1-x-y]O2 have received considerable attention. However, severe voltage decay and structural distortion of O3-type layered oxides hinder further practical applications. O2-type layered cathode materials can restrict the movements of transition metals and effectively suppress the voltage decay. However, O2-type layered oxides are fundamentally limited by inferior rate performance. Herein, we introduce cobalt into the TM layer in the O2-type oxide, Li0.80[Ni0.25Mn0.66Co0.02□0.07]O2 (□ represents vacancy, O2-LNMCO), which increases the electronic and ionic conductivity, improving the Li+ diffusion kinetics. Significantly, O2-LNMCO exhibits excellent rate properties, delivering a discharge specific capacity of 145 mAh g-1 at 5 C and 111.6 mAh g-1 at 10 C. Furthermore, the voltage decay of O2-LNMCO was restrained with an attenuation rate of 2.23 mV per cycle.
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