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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Dual-mode switching of a bidirectional self-rectifying Ti/HfO2/Ti device for bipolar and electronic complementary
Hyun Young Kim1, Néstor Ghenzi1, Hyungjun Park1
1Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanakgu, Seoul 08826, Republic of Korea. tagyun@snu.ac.kr.
Abstract:
This study explores the dual-mode switching behavior of bidirectional self-rectifying Ti/HfO2/Ti (THT) memristors to address the growing demand for efficient in-memory computing. The device operates in electronic bipolar resistive switching (eBRS) and electronic complementary resistive switching (eCRS) modes with bidirectional self-rectifying properties, differing from conventional unidirectional self-rectifying devices. The device achieves stable dual-mode switching by utilizing electronic trapping/detrapping at oxide layers formed at the top and bottom interfaces, while the HfO2 layer in the middle serves as a blocking layer. The characteristic bidirectional dual-mode self-rectifying switching offers efficient parity bit generation through in-memory parity generation, minimizing overhead and potential errors during data delivery. When the THT memristors are integrated into a 1 × n line cell configuration, the eBRS mode device as a 1-bit encoded memory cell and the eCRS mode device as a 1-bit parity cell within the given interconnect line enable the desired in-memory parity generation.
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