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Optical gaps of F-center defects in LiF using many-body methods
Ritaj Tyagi1, Abhisek Ghosal1, Vamsee K Voora1
1Department of Chemical Sciences, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India. vamsee.voora@tifr.res.in.
Physical Chemistry Chemical Physics : PCCP
|August 19, 2025
Summary
We studied F-center defects in Lithium Fluoride (LiF) using advanced computational methods. Our findings reveal a significantly lower optical gap for surface F-centers compared to bulk F-centers.
Area of Science:
- Condensed matter physics
- Materials science
- Computational chemistry
Background:
- F-center defects impact wide-bandgap solid properties.
- Experimental and computational characterization of F-centers is challenging.
- Accurate modeling requires accounting for aperiodicity, lattice distortion, and polarization effects.
Purpose of the Study:
- To investigate bulk and surface F-center defects in LiF.
- To evaluate computationally efficient potentials for modeling these defects.
- To determine the optical gaps of bulk and surface F-centers.
Main Methods:
- Combined random phase approximation (RPA) based potentials with periodic electrostatic embedding.
- Evaluated single-pole exchange-correlation (1p-XC) and static-Coulomb hole screened exchange (st-COHSEX) potentials.
- Calculated optical gaps for bulk and surface F-center defects in LiF.
Main Results:
- The 1p-XC potential is suitable for modeling bulk and surface F-center defects.
- Predicted optical gap for bulk F-centers (5.24 eV) closely matches high-level quantum chemistry methods and experimental data.
- Identified a significantly lower optical gap (1.85 eV) for surface F-centers due to reduced confinement and increased lattice relaxation.
Conclusions:
- The 1p-XC approach provides an accurate and efficient method for studying F-center defects.
- Surface F-centers exhibit distinct electronic properties compared to bulk F-centers, with implications for materials applications.
- Further research into surface F-center defects is warranted due to their unique characteristics.
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