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In Situ Selenization Engineered Dual Schottky Heterojunctions: A Novel Architecture for High-Speed Broadband Photonic
Shaoqiu Ke1, Mengyu Ge1, Shengyan Zu1
1Key Laboratory of Light Field Manipulation and System Integration Applications in Fujian Province, College of Physics and Information Engineering, Minnan Normal University, Zhangzhou, 363000, China.
This study introduces a new method for creating high-quality 2D transition metal dichalcogenide WSe2 films on 3D semiconductors, overcoming interface defects for advanced photodetectors. The resulting devices offer broad spectral detection, fast response times, and polarization sensitivity.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- 2D transition metal dichalcogenides like WSe2 offer tunable band structures for advanced optoelectronic devices.
- Van der Waals heterostructures combining 2D and 3D materials show promise for high-performance photodetection.
- Conventional thin-film transfer methods introduce interface defects, limiting device performance.
Purpose of the Study:
- To address interfacial defects and integration challenges in WSe2-based 2D-3D heterojunction photodetectors.
- To develop a method for controllable growth of high-quality WSe2 films on GeSi/Ge substrates.
- To demonstrate a novel photodetector with broad spectral response, fast speed, and polarization sensitivity.
Main Methods:
- Utilized a GeSi diffusion barrier-mediated interfacial engineering strategy.
- Employed dual-temperature-zone furnace-based in situ selenization for WSe2 growth.
- Fabricated an 8 × 8 array photodetector using laser direct-writing lithography.
Main Results:
- Achieved controllable growth of high-quality WSe2 films on GeSi/Ge substrates.
- Demonstrated broad spectral detection (532 nm to 2200 nm) with high responsivity (5.61 A/W) and detectivity (3.77 × 1012 Jones) at 1550 nm.
- Exhibited fast response times (0.55/2.85 µs and 0.15/1.1 µs) and high 3-dB cutoff frequencies (234 and 374 kHz) due to a dual Schottky structure.
- Simultaneously achieved short-wave infrared imaging, polarization detection (dichroic ratio of 83.4), and high-speed data transmission.
Conclusions:
- The proposed in situ selenization and interfacial engineering strategy effectively overcomes limitations of conventional transfer processes.
- The developed WSe2/GeSi/n--Ge heterojunction photodetector exhibits exceptional performance across multiple parameters.
- This work establishes a technical paradigm for large-scale integration of broad-spectrum, high-speed 2D-3D optoelectronic devices.
