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|January 16, 2026
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Summary

This study introduces a novel Si-based photodetector using PdSe2/InGaAs/InP, overcoming limitations of traditional devices. The new photodetector offers enhanced responsivity and polarization sensitivity for infrared detection.

Keywords:
In0.53Ga0.47As/InPP-I-N structurePdSe2PolarizationThin-film transfer

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanotechnology

Background:

  • Conventional InP/InGaAs P-I-N photodetectors have limited spectral range, low responsivity, and lack polarization sensitivity.
  • Addressing these limitations is crucial for advancing optical sensing technologies.

Purpose of the Study:

  • To develop a Si-based vertical PdSe2/InGaAs/InP P-I-N heterojunction photodetector.
  • To leverage the unique properties of PdSe2 and InGaAs for improved photodetector performance.

Main Methods:

  • Fabrication of a Si-based vertical heterojunction photodetector.
  • Integration of Palladium Diselenide (PdSe2) with Indium Gallium Arsenide (InGaAs) and Indium Phosphide (InP).
  • Characterization of the photodetector's spectral response, responsivity, and polarization sensitivity.

Main Results:

  • Achieved record responsivities: 2.59 A/W at 1310 nm, 0.628 A/W at 1550 nm, 8.99 mA/W at 1850 nm, and 2.67 mA/W at 2200 nm.
  • Demonstrated exceptional polarization sensitivity with high polarization extinction ratios (e.g., 408.6 at 1550 nm).
  • Extended detection range beyond the InGaAs cutoff wavelength.

Conclusions:

  • The novel heterojunction photodetector overcomes fundamental limitations of conventional devices.
  • The synergy of PdSe2's anisotropy and P-I-N architecture enables on-chip polarization-sensitive IR systems.
  • This advancement paves the way for sophisticated integrated optical sensing solutions.