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Interstitial Ag+ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites
Haiyang Qin1,2, Zijia Wang1,2, Qinrao Li1,2
1College of Intelligent Systems Science and Engineering, Harbin Engineering University, Harbin 150001, China.
Engineered silver ions in halide perovskite memristors stabilize devices and improve performance. This breakthrough enhances charge transport and enables stable resistive switching for neuromorphic applications.
Area of Science:
- Materials Science
- Solid-State Physics
- Device Engineering
Background:
- Halide perovskite memristors show promise for neuromorphic computing.
- Unclear conduction mechanisms limit stability and performance.
- Ion migration and interface tunability are key features.
Purpose of the Study:
- To enhance stability and controllability of halide perovskite memristors.
- To elucidate the role of interstitial ions in device operation.
- To engineer perovskite memristors for improved performance.
Main Methods:
- Incorporation of interstitial silver ions (Ag+) into quasi-2D halide perovskites ((C6H5C2H4NH3)2Cs n-1Pb nI3n+1).
- Investigation of ion migration and charge trapping mechanisms.
- Fabrication and characterization of memristor devices.
Main Results:
- Ag+ ions form stable structures and introduce deep-level energy states that act as charge traps.
- Enhanced electron transparency near the Fermi level improves charge transport.
- Devices exhibit an ultrahigh on/off ratio (~10^8) and low operating voltage (~0.31 V).
Conclusions:
- Interstitial Ag+ ions stabilize perovskite structures and modulate conduction.
- Ag+ ions facilitate controlled filament formation and stable resistive switching.
- This approach offers a robust strategy for high-performance perovskite memristor engineering.
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