Interstitial Ag+ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites

Haiyang Qin1,2, Zijia Wang1,2, Qinrao Li1,2

  • 1College of Intelligent Systems Science and Engineering, Harbin Engineering University, Harbin 150001, China.

PubMed
Summary

Engineered silver ions in halide perovskite memristors stabilize devices and improve performance. This breakthrough enhances charge transport and enables stable resistive switching for neuromorphic applications.

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