Design and TCAD Simulation of GaN P-i-N Diode with Multi-Drift-Layer and Field-Plate Termination Structures

Vertical GaN P-i-N diodes exhibit excellent high-voltage performance, fast switching speed, and low conduction losses, making them highly attractive for power applications. However, their breakdown voltage is severely constrained by electric field crowding at device edges. Using silvaco tcad (2019) tools, this work systematically evaluates multiple edge termination techniques, including deep-etched mesa, beveled mesa, and field-plate configurations with both vertical and inclined mesa structures. We present an optimized multi-drift-layer GaN P-i-N diode incorporating field-plate termination and analyze its electrical performance in detail. This study covers forward conduction characteristics including on-state voltage, on-resistance, and their temperature dependence, reverse breakdown behavior examining voltage capability and electric field distribution under different temperatures, and switching performance addressing both forward recovery phenomena, i.e., voltage overshoot and carrier injection dynamics, and reverse recovery characteristics including peak current and recovery time. The comprehensive analysis offers practical design guidelines for developing high-performance GaN power devices.