Investigation and Application of Key Alignment Parameters for Overlay Accuracy in 3D Structures

With the growing adoption of 3D stacked memory structures, precise alignment and overlay control have become critical for multi-layer overlay accuracy. The metrology accuracy and stability of alignment marks are crucial to ensuring optimal alignment and overlay performance. This study systematically investigates the contributions of two key alignment parameters-Wafer Quality (WQ) and Alignment Position Deviation (APD)-to the alignment model residue in 3D structures. Through experimental and simulation approaches, we analyze the interplay between WQ, APD and overlay performance. Results reveal that APD exhibits a stronger correlation with uncorrectable model residue, particularly under global process variations such as etch non-uniformity. Furthermore, APD sensitivity varies directionally (X/Y direction marks) and spatially (wafer edge versus center), highlighting the need for targeted mark designs in process-sensitive zones. These findings provide actionable insights for optimizing alignment strategies, mark designs and process monitoring throughout R&D, technology development and high-volume manufacturing phases.