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Total Ionizing Dose Effect Simulation Modeling and Analysis for a DCAP Power Chip.

Xinfang Liao1, Danyang Lei1, Yanjun Fu2

  • 1Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.

Micromachines
|August 28, 2025
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Summary
This summary is machine-generated.

Total-dose radiation degrades the performance of Direct connection to the output CAPacitor (DCAP) power chips. The bandgap reference circuit is most sensitive, impacting output voltage accuracy and switching frequency.

Keywords:
fault injection modelpower chipradiation sensitivity analysistotal ionizing dose effect

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Area of Science:

  • Semiconductor device physics
  • Radiation effects in electronics
  • Integrated circuit reliability

Background:

  • Power chips are crucial components in electronic systems.
  • Radiation environments can degrade semiconductor device performance.
  • Understanding these effects is vital for reliable system design.

Purpose of the Study:

  • To systematically study the performance degradation of a 0.18 μm BCD-process DCAP power chip under total-dose radiation.
  • To analyze the impact of radiation on MOS device electrical characteristics.
  • To develop and apply a radiation fault injection model for circuit-level simulation.

Main Methods:

  • Device-level simulation to analyze MOS device electrical characteristics under radiation.
  • Establishment of a total-dose fault injection model.
  • Circuit-level simulation of the DCAP power chip using the fault model.

Main Results:

  • Total-dose radiation significantly degrades the output voltage accuracy of the DCAP power chip.
  • Switching frequency of the DCAP power chip is also degraded by total-dose radiation.
  • The bandgap reference circuit was identified as the most radiation-sensitive module within the DCAP chip.

Conclusions:

  • The study provides a comprehensive analysis of total-dose radiation effects on DCAP power chips.
  • The bandgap reference circuit's sensitivity necessitates focused radiation hardening strategies.
  • Findings support the development of radiation-hardened DCAP power chip designs.