Total Ionizing Dose Effect Simulation Modeling and Analysis for a DCAP Power Chip

Area of Science:

• Semiconductor device physics
• Radiation effects in electronics
• Integrated circuit reliability

Background:

• Power chips are crucial components in electronic systems.
• Radiation environments can degrade semiconductor device performance.
• Understanding these effects is vital for reliable system design.

Purpose of the Study:

• To systematically study the performance degradation of a 0.18 μm BCD-process DCAP power chip under total-dose radiation.
• To analyze the impact of radiation on MOS device electrical characteristics.
• To develop and apply a radiation fault injection model for circuit-level simulation.

Main Methods:

• Device-level simulation to analyze MOS device electrical characteristics under radiation.
• Establishment of a total-dose fault injection model.
• Circuit-level simulation of the DCAP power chip using the fault model.

Main Results:

• Total-dose radiation significantly degrades the output voltage accuracy of the DCAP power chip.
• Switching frequency of the DCAP power chip is also degraded by total-dose radiation.
• The bandgap reference circuit was identified as the most radiation-sensitive module within the DCAP chip.

Conclusions:

• The study provides a comprehensive analysis of total-dose radiation effects on DCAP power chips.
• The bandgap reference circuit's sensitivity necessitates focused radiation hardening strategies.
• Findings support the development of radiation-hardened DCAP power chip designs.