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Related Concept Videos

P-N junction01:11

P-N junction

673
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
673
Carrier Transport01:21

Carrier Transport

561
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
561
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

505
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
505
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

792
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
792
Biasing of P-N Junction01:16

Biasing of P-N Junction

839
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
839
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

331
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
331

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Charge Transfer Dynamics in WS2/NiPS3 Heterostructures.

Yuanhe Li1,2, Xin Wei1,2, Wenkai Zhu1,2

  • 1State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.

The Journal of Physical Chemistry Letters
|August 29, 2025
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Summary

We studied charge transfer dynamics in magnetic van der Waals heterostructures. Findings reveal unique d-orbital localization in magnetic materials, crucial for designing advanced electronic devices.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Magnetic van der Waals (vdW) heterostructures (HSs) offer tunable charge and spin transfer via interface engineering.
  • Understanding the dynamics of interfacial phenomena in these systems is critical but requires further investigation.

Purpose of the Study:

  • To investigate the interfacial charge transfer dynamics in a specific vdW HS.
  • To explore the role of d-orbital localization in magnetic materials within these heterostructures.

Main Methods:

  • Fabrication of a heterostructure comprising layered antiferromagnetic NiPS3 and transition metal dichalcogenide WS2.
  • Resonant excitation of WS2 to probe interfacial charge transfer dynamics.
  • Spectroscopic analysis to observe d-d transitions and trion emissions.

Main Results:

  • Observed enhanced d-d transition in NiPS3 due to charge transfer from WS2 to Ni 3d orbitals.
  • Detected anomalous enhancement of trion emission in WS2.
  • Measured a slow (∼23 ps) charge transfer from NiPS3 to WS2, linked to localized Ni 3d orbitals.

Conclusions:

  • The study highlights the significant localization property of d-orbitals in magnetic materials.
  • Provides crucial insights into the interfacial dynamics of magnetic vdW HS.
  • Findings are fundamental for the design of novel electronic devices utilizing magnetic vdW HS.