High-responsivity dielectric metasurface Si-based InGaAs photodetector

Area of Science:

• Optoelectronics
• Materials Science
• Nanotechnology

Background:

• Silicon-based photodetectors are crucial for near-infrared (NIR) detection.
• Improving their efficiency and performance remains a key challenge in optoelectronics.

Purpose of the Study:

• To enhance the performance of Silicon-based Indium Gallium Arsenide/Indium Phosphide (InGaAs/InP) Multiple Quantum Well (MQW) photodetectors.
• To investigate the integration of dielectric metasurface (DM) structures for improved light-matter interactions.

Main Methods:

• Fabrication of Si-based InGaAs/InP MQW photodetectors integrated with DM structures.
• Utilized Finite-Difference Time-Domain (FDTD) simulations to analyze light-matter interactions.
• Experimental characterization of photocurrent, responsivity, dark current, and linearity.

Main Results:

• Achieved 11.8 times photocurrent enhancement and 4.65 times responsivity improvement compared to conventional devices.
• FDTD simulations confirmed optimized light-matter interactions within the DM structure, aligning with experimental findings.
• Demonstrated a low dark current of 9 × 10^-3 μA and superior linearity in the photoelectric response.

Conclusions:

• The integration of dielectric metasurfaces significantly enhances the performance of Si-based MQW photodetectors.
• These devices offer a promising platform for high-performance near-infrared detection.
• The study validates the effectiveness of metasurface engineering for advanced optoelectronic applications.