Compact modeling of 2D nanotransistors: materials characteristics, device structures, and analytical techniques

Area of Science:

• Materials Science
• Semiconductor Physics
• Nanoelectronics

Background:

• Two-dimensional (2D) materials offer superior electrostatic control and scaling potential for next-generation transistors due to their atomic thinness.
• Existing compact models for silicon MOSFETs are insufficient for the unique characteristics of 2D field-effect transistors (2D-FETs).

Purpose of the Study:

• To review compact modeling strategies for 2D-FETs.
• To discuss the challenges and future perspectives for 2D material-based nanoelectronics.

Main Methods:

• Examination of key 2D materials suitable for nanoelectronic applications.
• Analysis of various compact modeling approaches for top-gated 2D-FETs.
• Investigation of transport regimes from diffusive to ballistic.

Main Results:

• Identification of critical non-idealities affecting 2D-FET performance, including short-channel effects, interface traps, and non-ohmic 3D-2D contacts.
• Discussion of the limitations of current modeling techniques for 2D-FETs.
• Highlighting the need for advanced models beyond silicon MOSFET paradigms.

Conclusions:

• Accurate compact models are essential for integrating 2D-FETs into high-density circuits.
• Addressing non-idealities and exploring new modeling approaches are key for advancing 2D nanoelectronics.
• 2D semiconductors hold significant promise for future electronic applications.