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Related Experiment Video

Updated: Sep 9, 2025

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices.

Ryun-Han Koo¹, Seungwhan Kim¹, Jiseong Im¹

¹Department of Electrical and Computer Engineering and Inter- University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Korea.

Nano Convergence

|August 29, 2025

Summary

This summary is machine-generated.

Sputtering plasma power affects ferroelectric tunnel junction (FTJ) performance by altering trap density. Optimizing plasma conditions minimizes noise, enhancing memory and neuromorphic devices while ensuring reliability.

Keywords:

Ferroelectric tunnel junction Low-frequency noise (LFN)Plasma-induced damage Stochasticity Trap formation

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Area of Science:

Materials Science
Solid State Physics
Device Engineering

Background:

Ferroelectric tunnel junctions (FTJs) based on HfZrO₂ (HZO) are promising for memory and neuromorphic applications.
Sputtering plasma processes can introduce defects, influencing device electrical characteristics.

Purpose of the Study:

To investigate how sputtering plasma-induced damage affects the stochastic properties of HZO-based FTJs.
To optimize device performance for memory and neuromorphic applications by controlling plasma-induced defects.

Main Methods:

Low-frequency noise (LFN) spectroscopy was used to analyze stochastic characteristics.
Temperature-dependent electrical measurements were performed.
Sputtering plasma power was systematically varied during top electrode deposition.

Main Results:

Increased sputtering plasma power led to higher trap density in the HZO layer.
Higher trap density promoted Poole-Frenkel conduction and increased current noise magnitude.
Enhanced on-current density and ferroelectric tunnel electroresistance (TER) ratio were observed, but with increased stochastic fluctuations.

Conclusions:

Plasma process conditions critically influence trap density, LFN, and device performance in FTJs.
Optimizing sputtering parameters can minimize stochastic noise while enhancing electrical performance.
This study provides guidelines for developing reliable, next-generation ferroelectric-based memory and neuromorphic systems.