Related Experiment Video
Updated: Jan 18, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Air-Stable Lithiation of MoS2 for Direct-Bandgap Multilayers
Qi Fu1, Yichi Zhang1, Jichuang Shen2
1School of Physics Research Center for Industries of the Future Department of Physics School of Science Zhejiang University Westlake University Hangzhou Zhejiang 310024 P.R. China.
None:
Due to its sizable direct bandgap and strong light-matter interactions, the preparation of monolayer MoS2 has attracted significant attention and intensive research efforts. However, multilayer MoS2 is largely overlooked because of its optically inactive indirect bandgap caused by interlayer coupling. It is highly desirable to modulate and decrease the interlayer coupling so that each layer in multilayer MoS2 can exhibit a monolayer-like direct-gap behavior. Herein, the nanoprobe-controlled fabrication of LixMoS2-based multilayers is demonstrated, exhibiting a direct bandgap and strong photoluminescence emission from tightly bound excitons and trions. The fabrication of LixMoS2 multilayers is facilitated by the newly developed Li-ion platform, featuring tip-induced Li intercalation, doping patterning with a spatial resolution of 517 nm, air stability, and rewritability. Ultralow frequency Raman characterizations reveal that controlled Li intercalation effectively transforms multilayer MoS2 into the stack of multiple monolayers, leading to a 26-fold enhancement of photoluminescence compared to a monolayer. The intercalation result is different from existing observations of transforming MoS2 multilayers into metallic phases. This work not only provides a highly controllable Li-ionic engineering platform for studying Li-material interactions and developing novel ionic electronics but also offers an intriguing direct-bandgap semiconductor for optoelectronic applications.
More Related Videos
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
11:24Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...