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Tunable Superlinear Gallium Oxide Gate-All-Around Deep-Ultraviolet Phototransistor for Near-Field Imaging.

Yan Liu1, Xiaohu Hou1, Mengfan Ding1

  • 1School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, China.

ACS Nano
|September 8, 2025
PubMed
Summary

Researchers developed a tunable Gallium Oxide (Ga2O3) deep-ultraviolet phototransistor. This device exhibits electrically controlled superlinear photoresponse for advanced optical detection and imaging applications.

Keywords:
GAA phototransistordeep-ultraviolet photodetectorgallium oxidenear-field imagingsuperlinear optical response

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Devices

Background:

  • Superlinear photodetectors are crucial for intelligent optical systems but face material limitations.
  • Existing devices require specific photosensitive materials, hindering practical integration.

Purpose of the Study:

  • To propose a tunable superlinear Gallium Oxide (Ga2O3) deep-ultraviolet gate-all-around (GAA) phototransistor.
  • To enable flexible switching between linear and superlinear photoresponse via gate voltage modulation.

Main Methods:

  • Fabrication of a p-n heterojunction Ga2O3 deep-ultraviolet phototransistor with a gate-all-around structure.
  • Investigation of the photogating effect for tunable superlinear characteristics.
  • Characterization of response speed and application in near-field imaging.

Main Results:

  • The Ga2O3 GAA phototransistor exhibited tunable superlinear characteristics due to the photogating effect.
  • Electrically controlled switching between linear and superlinear photoresponse was achieved.
  • An ultrafast response speed of 749 μs was demonstrated, attributed to the GAA structure's carrier recombination acceleration.
  • Successful application in near-field imaging with effective focusing was shown.

Conclusions:

  • The proposed Ga2O3 GAA phototransistor offers a feasible approach for realizing tunable superlinear photodetectors.
  • The device demonstrates potential for flexible integration in advanced optical sensing systems, including near-field imaging.