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Room-temperature negative differential resistance in single-atom devices.

Vladislav V Shorokhov1,2, Denis E Presnov1,2, Ilia D Kopchinskii2

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Single-atom electronic devices using arsenic, phosphorus, and potassium dopants in silicon show negative differential resistance (NDR). Potassium-based devices achieve room-temperature NDR, paving the way for advanced single-atom electronics.

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Area of Science:

  • Solid State Physics
  • Quantum Electronics
  • Materials Science

Background:

  • Single-atom electronic devices offer potential for miniaturization.
  • Negative differential resistance (NDR) is a key phenomenon for electronic applications.
  • Silicon is a widely used semiconductor host matrix.

Purpose of the Study:

  • To investigate NDR in single-atom devices with various dopants in silicon.
  • To explore the potential for room-temperature operation of such devices.
  • To develop a theoretical model that accurately reproduces experimental observations.

Main Methods:

  • Fabrication and characterization of single-atom devices using arsenic, phosphorus, and potassium dopants in silicon.
  • Experimental observation and analysis of negative differential resistance (NDR).
  • Development and application of a theoretical model based on sequential electron tunneling and Keldysh diagram technique.

Main Results:

  • All fabricated devices exhibited NDR.
  • Potassium-doped silicon devices demonstrated NDR at room temperature.
  • The theoretical model successfully reproduced experimental results, incorporating effective local temperature and spectral fluctuation averaging.
  • Control experiments on undoped silicon revealed bandgap boundaries.

Conclusions:

  • The use of unconventional dopants like potassium in silicon enables high characteristic energies for single-atom devices.
  • Achieving room-temperature NDR is a significant advancement for single-atom electronics.
  • The developed model provides a robust framework for understanding electron transport in these systems.