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Updated: Jan 18, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Proposed Five-Electron Charge Quadrupole Qubit
John H Caporaletti1, J P Kestner1
1University of Maryland Baltimore County, Department of Physics, Baltimore, Maryland 21250, USA.
None:
A charge qubit couples to environmental electric field fluctuations through its dipole moment, resulting in fast decoherence. We propose the p-orbital (pO) qubit, formed by the single-electron, p-like valence states of a five-electron Si quantum dot, which couples to charge noise through the quadrupole moment. We demonstrate that the pO qubit offers distinct advantages in quality factor, gate speed, readout, and size. We use a phenomenological, dipole two-level-fluctuator charge noise model to estimate a T_{2}^{*}∼80 ns. In conjunction with Rabi frequencies of order 10 GHz, an order of magnitude improvement in qubit quality factor is expected relative to state-of-the-art semiconductor spin qubits. The pO qubit features all-electrical control via modulating the dot's eccentricity. We also show how to perform two-qubit gates via the 1/r^{5} quadrupole-quadrupole interaction. We find a universal gate set using gradient ascent-based control pulse optimization, subject to 10 GHz maximum allowable bandwidth and 1 ns pulse times.
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