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Updated: Jan 18, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Dirac Point in the Charge Compensated Single-Crystal Ru3Sn7
Xiaoyu Ji1,2, Xuebo Zhou2, Shilin Zhu2
1Department of Physics, Liaoning University, Shenyang 110036, China.
Abstract:
Ru3Sn7 crystallizes in the cubic Ir3Ge7-type structure (space group Im3m), a class of intermetallic compounds. Previous studies focused primarily on its crystal structure, band calculations, and basic transport properties. Here, we report a systematic investigation of high-quality single crystals via electrical resistivity, Hall effect, specific heat, and thermal transport measurements. The T3X7 intermetallic family-with its diverse electronic ground states-provides an ideal platform for exploring such topology-property relationships. Ru3Sn7 exhibits metallic behavior, with consistent Hall effect and Seebeck coefficient data indicating a compensated electron-hole two-band system. Temperature-dependent modulation of electronic states near the Fermi surface alters charge carrier transport, which may imply the presence of a Lifshitz transition in Ru3Sn7. More importantly, magnetic quantum oscillations are observed for the first time, confirming the presence of two Dirac points in its band structure.
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