Integrated silicon elliptical ring modulator with ultra-high bandwidth beyond 110 GHz

Area of Science:

• Photonics and Optical Engineering
• Integrated Optics
• Semiconductor Devices

Background:

• Optical interconnects are crucial for energy-efficient, high-throughput optical input/output (I/O).
• Silicon photonic microring modulators are key components for optical I/O due to their size, efficiency, and wavelength-division multiplexing compatibility.
• Optimizing high-speed microring modulators is challenging due to trade-offs between bending radius, coupling strength, and cavity loss.

Purpose of the Study:

• To demonstrate an elliptical silicon ring modulator with improved bus-ring coupling.
• To overcome the limitations of traditional circular microring modulators in achieving high performance.
• To enable higher data rates in optical communication systems.

Main Methods:

• Fabrication of an elliptical silicon ring modulator.
• Characterization of the device's optical and electro-optic performance.
• Testing modulation capabilities with high-baud-rate signals.

Main Results:

• Achieved a high extinction ratio of 32 dB.
• Demonstrated a 3-dB electro-optic bandwidth exceeding 110 GHz.
• Successfully supported 112 Gbaud PAM-4 modulation.

Conclusions:

• The elliptical silicon ring modulator design enhances bus-ring coupling, improving performance.
• This device offers a promising solution for next-generation optical interconnects.
• The demonstrated performance paves the way for higher-speed and more efficient optical communication.