High efficiency polarization encoding using a single thermal and electro-optic TFLN-based chip for quantum key...

Quantum key distribution (QKD) relies on quantum state manipulation to achieve unconditionally secure key transmission. Polarization encoding, a mainstream QKD scheme, faces practical limitations due to the bulkiness and instability of discrete optical components. This work presents a polarization-encoding chip based on hybrid thin-film lithium niobate (TFLN) and silicon-on-insulator (SOI) integration, enabling dynamic control of four polarization states |R〉, |A〉, |L〉, and |D〉 with extinction ratios over 16.78 dB, using only a single thermal and electro-optic phase shifter in a compact architecture. Experimental results demonstrate that the chip achieves a secure key rate (SKR) of 328 kbps and a quantum bit error rate (QBER) of 1.96% at 100 MHz repetition rate in a 10 km fiber-based QKD system. Compared to conventional silicon-based carrier-depletion modulators (CDMs), the TFLN-SOI hybrid integration design avoids phase saturation and dynamic loss induced by carrier depletion, significantly enhancing the stability and scalability of polarization encoding.