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Edge-based optical proximity correction for near-field lithography.

Ziyi Wang, Weijie Kong, Ge Yin

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    |September 23, 2025
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    This study introduces an edge-based inverse lithography optical proximity correction for near-field lithography. This method improves exposure pattern fidelity by numerically computing mask layout gradients and using edge segmentation.

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    Area of Science:

    • Micro-/nano-fabrication
    • Optical lithography
    • Computational lithography

    Background:

    • Near-field lithography achieves super-resolution beyond the optical diffraction limit using evanescent waves.
    • Traditional inverse lithography technology-based optical proximity correction is incompatible with near-field lithography, hindering pattern fidelity.
    • Existing methods struggle to enhance exposure pattern accuracy in near-field lithography.

    Purpose of the Study:

    • To develop an edge-based inverse lithography optical proximity correction (OPC) approach specifically for near-field lithography.
    • To enhance the fidelity of exposure patterns in near-field micro-/nano-fabrication.
    • To address the limitations of applying conventional OPC techniques to near-field lithography.

    Main Methods:

    • Introduction of the adjoint method for numerical computation of mask layout edge gradients.
    • Application of the gradient descent algorithm combined with edge segmentation.
    • Development of an edge-based inverse lithography OPC approach tailored for near-field lithography.

    Main Results:

    • Simulation results demonstrate effective suppression of exposure pattern deviation.
    • The proposed approach mitigates the impact of optical proximity effects.
    • Finer segmentation of mask layout edges leads to improved fidelity of exposure patterns.

    Conclusions:

    • The developed edge-based inverse lithography OPC approach significantly enhances exposure pattern fidelity in near-field lithography.
    • The method effectively overcomes the incompatibility of traditional OPC techniques with near-field lithography.
    • This approach holds promise for advanced near-field micro-/nano-fabrication applications.