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Photoluminescence Properties and Stable Bipolar Resistive Switching Behavior of Two Eu(III)-Doped Hexameric
Wen-Jun Mi1, Xue-Ru Zhou1, Guang-Qu Ke1
1College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China.
Abstract:
Due to their structural versatility, selenotungstates have emerged as a prominent research focus in polyoxometalate (POT) chemistry. Two Eu(III)-doped hexameric selenotungstates with distinct architectures were synthesized via a one-pot synthetic strategy. Detailed structural investigations were prompted by their remarkable photoluminescence lifetimes of 759.8 μs (1) and 722.8 μs (2), significantly surpassing those of most reported Eu(III)-doped polyoxotungstates. Comparative analysis with literature precedents revealed a strong correlation between the luminescent behavior and the coordination environment of the Eu(III) centers. Furthermore, the compounds exhibited exceptional resistive switching performance at ambient conditions, with switching ratios of 1.03 × 103 (1) and 3.67 × 103 (2) that exceed most reported values for oligomeric POT-based systems. This work systematically investigates the structure-property relationships among molecular architectures, luminescent characteristics, and resistive switching behavior, providing experimental evidence for the design of new luminescent materials and molecular storage devices.
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