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Published on: February 15, 2016
Elevation from Binary to Ternary Resistive Switching Behaviors in Cubane-like Copper Iodide Clusters by Ligand
Xueru Zhou1, Yanfeng Du1, Lintao Fan1
1Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, P. R. China.
None:
Multilevel memory is a feasible solution for the explosive demand for data storage in the Big Data era. In this work, ligand engineering has been implemented in cubane-type Cu4I4L4 clusters to obtain three complexes: Cu4I4L4 (L = P(Ph-p-Cl)3 (1), PPh3 (2), P(Ph-p-OCH3)3 (3)), in which the substitutes on the p-position of benzyl vary from electron-withdrawing (-Cl) to electron-donating (-OCH3) groups. Interestingly, with enhancement of electron-donating ability, the trend of more distorted Cu4I4 cores, enhanced Cu···Cu interactions, and higher structural dimensions can be achieved. Consequently, in FTO/Cu4I4L4/Ag memristors, the electron-withdrawing group (-Cl) and neutral group (-H) exhibit bistable resistive switching performances, and a strong electron-donating group (-OCH3) can give ternary resistive switching behavior (OFF/ON1/ON2 current ratio: 1:102.74:103.73, VSet1/VSet2: 1.09/1.48 V). The mechanism about the elevation from binary to ternary memory behavior in these cubane-like Cu4I4L4 clusters has been clarified: the external voltage-induced I···Cl halogen bonding and C-H···π interaction contribute to the binary resistive switching performances in FTO/1/Ag and FTO/2/Ag, and the presence of the second conductive state in FTO/3/Ag stems from the injected carrier delocalization on the Cu4I4 core due to strong Cu···Cu interactions. The rules drawn in this work can provide a feasible strategy for the design of novel multilevel memories.
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