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Updated: Jan 16, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Comprehensive investigation of emission homogeneity of InGaAs multiple quantum wells using spatially resolved
Andrea Zelioli1, Aivaras Špokas2,3, Bronislovas Čechavičius2
1State research institute Center for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257, Vilnius, Lithuania. andrea.zelioli@ftmc.lt.
Abstract:
In this study the emission homogeneity of InGaAs multiple quantum wells (MQW) was investigated. Two sets of samples grown by molecular beam epitaxy, with varying In content and QW thickness as well as barrier thickness, were mapped using room temperature photoluminescence and micro-photoluminescence. The result showed that increasing In content leads to a higher stress accumulation which can lead to the formation of a denser net of lattice mismatch dislocations in the QW layer. Samples with optimized barrier design exhibit uniform emission intensity.
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