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Heteroatom-Doped Graphene Quantum Dots: Recent Advancements in Energy Storage, Optical, and Optoelectronic
Prachi Kumari1,2, Rajen Kundu1,2
1Analytical and Applied Chemistry Division, CSIR-National Metallurgical Laboratory, Jamshedpur, 831007, India.
Chemistry, an Asian Journal
|September 26, 2025
Summary
Hetero-doped graphene quantum dots (HGQDs) offer enhanced electrochemical and optical properties due to heteroatom doping. This review covers their synthesis, characterization, and applications in energy and sensing technologies.
Area of Science:
- Materials Science
- Nanotechnology
- Electrochemistry
Background:
- Graphene quantum dots (GQDs) possess unique properties but can be further optimized.
- Heteroatom doping introduces elements like N, B, P, and S into the graphene lattice.
- This doping significantly modifies the electronic structure and performance of GQDs.
Purpose of the Study:
- To review recent advancements in the synthesis and characterization of hetero-doped graphene quantum dots (HGQDs).
- To highlight how heteroatom doping enhances the electrochemical and optical properties of GQDs.
- To explore the applications of HGQDs in energy storage, conversion, and sensor technologies.
Main Methods:
- Literature review of recent research on HGQDs.
- Analysis of synthesis techniques for incorporating heteroatoms (N, B, P, S).
- Examination of characterization methods for HGQDs' properties.
- Evaluation of HGQDs' performance in various applications.
Main Results:
- Heteroatom doping tailors the electronic structure of GQDs.
- Doping significantly improves electrochemical activity and optical response.
- HGQDs demonstrate enhanced performance in energy devices and sensors compared to undoped GQDs.
Conclusions:
- HGQDs represent a promising class of materials with tunable properties.
- Heteroatom doping is a key strategy for enhancing GQD functionality.
- HGQDs hold significant potential for next-generation technological applications.
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