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Updated: May 17, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Heteroatom-Doped Graphene Quantum Dots: Recent Advancements in Energy Storage, Optical, and Optoelectronic
Prachi Kumari1,2, Rajen Kundu1,2
1Analytical and Applied Chemistry Division, CSIR-National Metallurgical Laboratory, Jamshedpur, 831007, India.
Abstract:
Hetero-doped graphene quantum dots (HGQDs) are a cutting-edge material that has unique electrochemical and optical properties, making them highly attractive for several advanced applications. This review explores the latest advancements in the synthesis, characterization, and applications of HGQDs, highlighting their enhanced performance due to heteroatom doping. Incorporating different heteroatoms, such as nitrogen (N), boron (B), phosphorus (P), and sulfur (S), into the graphene lattice not only tailors the electronic structure of the quantum dots but also significantly improves their electrochemical activity and optical response. These enhancements are pivotal for applications in energy storage and conversion devices and sensors. By examining recent research, we elucidate how hetero-doping influences the properties of graphene quantum dots (GQDs) and discuss the promising future directions for their development. This comprehensive overview underscores the potential of HGQDs as versatile and efficient materials in next-generation technological applications.
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