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Ferroelectric Control of Interlayer Excitons Enables Nonvolatile Quantum Photonic Memory in Two-Dimensional
Shikun Hou1,2, Xing Xie1,2, Shaofei Li1
1Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
None:
Interlayer excitons in van der Waals heterostructures of monolayer transition metal dichalcogenides possess long lifetimes and pronounced out-of-plane dipole moments, offering a promising platform for nonvolatile quantum photonic memory and reconfigurable valleytronic logic. However, conventional tuning approaches─such as electrostatic gating, strain engineering, and chemical doping─are typically volatile, weakly tunable, or nonretentive, limiting the realization of reliable exciton-based information storage. Here, we demonstrate robust, nonvolatile control of interlayer excitons in MoSe2/WSe2/CuInP2S6 (CIPS) heterostructures via ferroelectric modulation. The bistable polarization states of the CIPS layer, arising from reversible Cu+ ion displacement under external bias, induce persistent in situ P-type and N-type doping at the MoSe2/WSe2 interface. This built-in polarization field enables deterministic modulation of exciton energy, photoluminescence intensity, line width, and valley polarization─all retained under high magnetic field conditions. Leveraging this mechanism, we realize a reprogrammable excitonic memory element with optically addressable binary logic states. Our findings establish ferroelectric control as a scalable and nonvolatile strategy for excitonic device engineering, opening avenues for electrically programmable quantum optoelectronic systems based on two-dimensional materials.
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