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Updated: Jan 16, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Overview of Thermal Management Solution for 3D Integrated Circuits Using Carbon-Nanotube-Based Silicon Through-Vias
Heebo Ha1, Hongju Kim2, Sumin Lee1
1Department of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul 06974, Republic of Korea.
Abstract:
Three-dimensional integrated circuit (3D IC) technology is an innovative approach in the semiconductor industry aimed at enhancing performance and reducing power consumption. However, thermal management issues arising from high-density stacking pose significant challenges. Carbon nanotubes (CNTs) have gained attention as a promising material for addressing the thermal management problems of through-silicon vias (TSVs) owing to their unique properties, such as high thermal conductivity, electrical conductivity, excellent mechanical strength, and low coefficient of thermal expansion (CTE). This paper reviews various applications and the latest research results on CNT-based TSVs. Furthermore, it proposes a novel TSV design using CNT-copper-tin composites to optimize the performance and assess the feasibility of CNT-based TSVs.

